October 2024,Hangzhou Gallium Semiconductor Co., Ltd.Utilize self-developedSecond generation casting technology,successGrowth of ultra-thick 6-inch gallium oxide single crystal,The thickness of the crystal ingot can reach more than 20mm!
As an emerging ultra-wide band gap semiconductor material, this ultra-thick gallium oxide single crystal has attracted widespread attention in the semiconductor field due to its excellent electrical properties.
Gallium oxide single crystal substrates are widely used in power electronic devices, mainly for high-voltage and high-power application scenarios such as the national grid, new energy vehicles, rail transit, and 5G communications.Compared with silicon carbide, the current mainstream third-generation semiconductor material, gallium oxide exhibits higher operating current and voltage in power device manufacturing, and has lower on-resistance and energy consumption.
However, the price of gallium oxide single crystal materials is relatively high, and the selling price of single crystal substrates of the same size is more than 10 times that of silicon carbide, which to a large extent limits its large-scale application in technology and market. In order to reduce the production cost of gallium oxide single crystal substrates, increasing the thickness of single crystal ingots is the most direct and effective means. However, in the growth of large-sized gallium oxide single crystals of 6 inches and above, ultra-thick single crystals are still a problem. .
After more than a year of technical research, the Gallium Semiconductor team has successfully grown a gallium oxide single crystal of more than 20 mm through improvements in casting technology, reaching an internationally leading level. Its thickness is that of guided mode (EFG) ingots. 2-3 times. At the same time, combined with Gallium Semiconductor’s ultra-thin substrate processing technology, this breakthrough has laid a more solid foundation for the commercial application of gallium oxide single crystal.
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(Reprinted from: Third Generation Semiconductor Industry)